Research Goal

Diffusion can fundamentally limit standard wet etching, thereby limiting the size of structure that can be released without the addition of etch ports. To release very high-aspect ratio MEMS structures or larger mesoscale structures with wet etching, this diffusion limit needs to be overcome. To do so, we developed an anodic sacrificial layer etching (ASLE) method. The ASLE method simultaneously beats standard etch processes by orders of magnitude for etch depth, sacrificial layer thinness, and etching time. A paper describing this process was published. (CRI & DARPA)  

Research Team:

Acknowledgement:

Work partially supported by National Science Foundation grant # & Office Naval Research Grant #

Related Publications: