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Etching high-band gap materials

Research Goal

My group is researching the energetics of laser and reactive ion etching, separately and in tandem. Currently, direct laser etching of high-band gap materials utilizes vacuum ultraviolet light, which can limit utility. By combining laser light and chemically reactive plasma, laser light near the visible spectrum can be used for maskless etching utilizing standard optics and patterning methods. This work is in conjunction with research into Inductively Coupled Plasma (ICP)-Deep Reactive Ion Etching System (DRIE) of silicon, silicon dioxide/nitride, and silicon carbide. Two papers to date have been submitted for publication. (NSF & ONR)

Research Team:

Acknowledgement:

Work partially supported by National Science Foundation grant # & Office Naval Research Grant #

Related Publications:

 

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